Advanced MRF240A RF BJT Transistors 8 A
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MRF240A
Advanced MRF240A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Package / Case | Axial | |
| Surface Mount | YES | |
| Supplier Device Package | Axial | |
| Number of Terminals | 4Terminals | |
| Transistor Element Material | SILICON | |
| Emitter- Base Voltage VEBO | 4 V | |
| Pd - Power Dissipation | 100 W | |
| Transistor Polarity | NPN | |
| Maximum Operating Temperature | + 200 C | |
| DC Collector/Base Gain hfe Min | 10 | |
| Minimum Operating Temperature | - 65 C | |
| Mounting Styles | Screw Mount | |
| Manufacturer | Advanced Semiconductor, Inc. | |
| Brand | Advanced Semiconductor, Inc. | |
| RoHS | Details | |
| Collector- Emitter Voltage VCEO Max | 18 V | |
| Package Description | FLANGE MOUNT, O-CRFM-F4 | |
| Package Style | FLANGE MOUNT | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Operating Temperature-Max | 200 °C | |
| Manufacturer Part Number | MRF240A | |
| Package Shape | ROUND | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ASI SEMICONDUCTOR INC | |
| Risk Rank | 5.09 | |
| Operating Temperature | -55°C ~ 250°C | |
| Series | Military, MIL-PRF-39007, RWR81S | |
| Packaging | Tape & Reel (TR) | |
| Size / Dimension | 0.085 Dia x 0.250 L (2.16mm x 6.35mm) | |
| Tolerance | ±1% | |
| Part Status | Active | |
| Number of Terminations | 2Terminations | |
| ECCN Code | EAR99 | |
| Temperature Coefficient | ±20ppm/°C | |
| Type | RF Bipolar Power | |
| Resistance | 54.9 Ohms | |
| Composition | Wirewound | |
| Power (Watts) | 1W | |
| Subcategory | Transistors | |
| Technology | Si | |
| Terminal Position | RADIAL | |
| Terminal Form | FLAT | |
| Reach Compliance Code | unknown | |
| Pin Count | 4 | |
| JESD-30 Code | O-CRFM-F4 | |
| Qualification Status | Not Qualified | |
| Operating Frequency | 160 MHz | |
| Failure Rate | S (0.001%) | |
| Configuration | Single | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | NPN | |
| Product Type | RF Bipolar Transistors | |
| Transistor Type | Bipolar Power | |
| Power Dissipation-Max (Abs) | 100 W | |
| Collector Current-Max (IC) | 8 A | |
| DC Current Gain-Min (hFE) | 10 | |
| Continuous Collector Current | 8 A | |
| Collector-Emitter Voltage-Max | 18 V | |
| Highest Frequency Band | VERY HIGH FREQUENCY BAND | |
| Collector-Base Capacitance-Max | 125 pF | |
| Features | Military, Moisture Resistant | |
| Product Category | RF Bipolar Transistors | |
| Height Seated (Max) | -- |
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