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MRF172 Tech Specifications

Advanced  MRF172 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Package / Case 211-07-3
Surface Mount NO
Number of Terminals 4Terminals
Transistor Element Material SILICON
Vds - Drain-Source Breakdown Voltage 65 V
Vgs th - Gate-Source Threshold Voltage 5 V
Pd - Power Dissipation 220 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 200 C
Vgs - Gate-Source Voltage 40 V
Minimum Operating Temperature - 65 C
Mounting Styles SMD/SMT
Manufacturer Advanced Semiconductor, Inc.
Brand Advanced Semiconductor, Inc.
RoHS Details
Id - Continuous Drain Current 9 A
Rds On - Drain-Source Resistance 1.5 mOhms
Package Description FLANGE MOUNT, O-CRFM-F4
Package Style FLANGE MOUNT
Package Body Material CERAMIC, METAL-SEALED COFIRED
Operating Temperature-Max 200 °C
Manufacturer Part Number MRF172
Package Shape ROUND
Part Life Cycle Code Active
Ihs Manufacturer ASI SEMICONDUCTOR INC
Risk Rank 4.61
Drain Current-Max (ID) 9 A
Packaging Tray
ECCN Code EAR99
Type RF Power MOSFET
Subcategory MOSFETs
Technology Si
Terminal Position RADIAL
Terminal Form FLAT
Reach Compliance Code unknown
Pin Count 4
JESD-30 Code O-CRFM-F4
Qualification Status Not Qualified
Operating Frequency 200 MHz
Configuration Single
Operating Mode ENHANCEMENT MODE
Output Power 80 W
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
Product Type RF MOSFET Transistors
Gain 10 dB
Drain Current-Max (Abs) (ID) 9 A
DS Breakdown Voltage-Min 65 V
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 220 W
Highest Frequency Band VERY HIGH FREQUENCY BAND
Product Category RF MOSFET Transistors
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