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BLV32F

Advanced  BLV32F technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Package / Case Axial
Supplier Device Package Axial
Emitter- Base Voltage VEBO 4 V
Pd - Power Dissipation 82 W
Transistor Polarity NPN
Maximum Operating Temperature + 200 C
DC Collector/Base Gain hfe Min 20
Minimum Operating Temperature - 65 C
Mounting Styles Screw Mount
Manufacturer Advanced Semiconductor, Inc.
Brand Advanced Semiconductor, Inc.
RoHS Details
Collector- Emitter Voltage VCEO Max 32 V
Operating Temperature -55°C ~ 250°C
Series Military, MIL-PRF-39007, RWR81S
Packaging Tape & Reel (TR)
Size / Dimension 0.085 Dia x 0.250 L (2.16mm x 6.35mm)
Tolerance ±1%
Part Status Active
Number of Terminations 2Terminations
Temperature Coefficient ±50ppm/°C
Type RF Bipolar Power
Resistance 2.1 Ohms
Composition Wirewound
Power (Watts) 1W
Subcategory Transistors
Technology Si
Operating Frequency 224 MHz
Failure Rate S (0.001%)
Product Type RF Bipolar Transistors
Transistor Type Bipolar Power
Continuous Collector Current 4 A
Features Military, Moisture Resistant
Product Category RF Bipolar Transistors
Height Seated (Max) --
BLV32F brand manufacturers: Advanced, Twicea stock, BLV32F reference price.Advanced. BLV32F parameters, BLV32F Datasheet PDF and pin diagram description download.You can use the BLV32F Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find BLV32F pin diagram and circuit diagram and usage method of function,BLV32F electronics tutorials.You can download from the Twicea.