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AGR21090EF Tech Specifications

Advanced  AGR21090EF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Package / Case Axial
Surface Mount YES
Supplier Device Package Axial
Number of Terminals 2Terminals
Transistor Element Material SILICON
Factory Pack QuantityFactory Pack Quantity 10
Manufacturer Advanced Semiconductor, Inc.
Brand Advanced Semiconductor, Inc.
RoHS Details
Package Description FLANGE MOUNT, R-CDFM-F2
Package Style FLANGE MOUNT
Package Body Material CERAMIC, METAL-SEALED COFIRED
Reflow Temperature-Max (s) 30
Operating Temperature-Max 200 °C
Manufacturer Part Number AGR21090EF
Package Shape RECTANGULAR
Number of Elements 1 Element
Part Life Cycle Code Active
Ihs Manufacturer AVAGO TECHNOLOGIES INC
Risk Rank 5.25
Operating Temperature -65°C ~ 175°C
Series Military, MIL-PRF-55182/01, RNC55
Packaging Bulk
Size / Dimension 0.094 Dia x 0.250 L (2.39mm x 6.35mm)
Tolerance ±0.5%
JESD-609 Code e0
Part Status Active
Number of Terminations 2Terminations
ECCN Code EAR99
Temperature Coefficient ±25ppm/°C
Resistance 124 kOhms
Terminal Finish TIN LEAD
Composition Metal Film
Power (Watts) 0.125W, 1/8W
Additional Feature HIGH RELIABILITY
Subcategory MOSFETs
Technology Si
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 225
Reach Compliance Code compliant
JESD-30 Code R-CDFM-F2
Qualification Status Not Qualified
Failure Rate S (0.001%)
Configuration SINGLE
Operating Mode ENHANCEMENT MODE
Case Connection SOURCE
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
Product Type RF MOSFET Transistors
DS Breakdown Voltage-Min 65 V
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 250 W
Highest Frequency Band S BAND
Features Military, Moisture Resistant, Weldable
Product Category RF MOSFET Transistors
Height Seated (Max) --
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