Advanced AGR21060EF RF MOSFETs Transistors
AGR21060EF
42-368-AGR21060EF
0603 (1608 Metric)
RoHS Compliant
RF MOSFET Transistors 2.11-2.17GHz13.5Watt Gain 14.5dB
In Stock Min. : 1
Mult. : 1
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AGR21060EF Tech Specifications
Advanced AGR21060EF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Package / Case | 0603 (1608 Metric) | |
| Surface Mount | YES | |
| Supplier Device Package | 0603 | |
| Number of Terminals | 2Terminals | |
| Transistor Element Material | SILICON | |
| Package | Tape & Reel (TR) | |
| Base Product Number | RS73G1JRT | |
| Mfr | KOA Speer Electronics, Inc. | |
| Product Status | Active | |
| Factory Pack QuantityFactory Pack Quantity | 10 | |
| Manufacturer | Advanced Semiconductor, Inc. | |
| Brand | Advanced Semiconductor, Inc. | |
| RoHS | Details | |
| Package Description | FLANGE MOUNT, R-CDFM-F2 | |
| Package Style | FLANGE MOUNT | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 200 °C | |
| Manufacturer Part Number | AGR21060EF | |
| Risk Rank | 5.25 | |
| Ihs Manufacturer | BROADCOM LTD | |
| Part Life Cycle Code | Active | |
| Number of Elements | 1 Element | |
| Package Shape | RECTANGULAR | |
| Operating Temperature | -55°C ~ 155°C | |
| Series | RS73-RT | |
| Packaging | Tray | |
| Size / Dimension | 0.063 L x 0.031 W (1.60mm x 0.80mm) | |
| Tolerance | ±0.25% | |
| JESD-609 Code | e0 | |
| Number of Terminations | 2Terminations | |
| ECCN Code | EAR99 | |
| Temperature Coefficient | ±50ppm/°C | |
| Resistance | 43.2 Ohms | |
| Terminal Finish | TIN LEAD | |
| Composition | Thick Film | |
| Power (Watts) | 0.2W, 1/5W | |
| Additional Feature | HIGH RELIABILITY | |
| Subcategory | MOSFETs | |
| Technology | Si | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| JESD-30 Code | R-CDFM-F2 | |
| Qualification Status | Not Qualified | |
| Failure Rate | - | |
| Configuration | SINGLE | |
| Operating Mode | ENHANCEMENT MODE | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | N-CHANNEL | |
| Product Type | RF MOSFET Transistors | |
| DS Breakdown Voltage-Min | 65 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 175 W | |
| Highest Frequency Band | S BAND | |
| Features | Automotive AEC-Q200 | |
| Product Category | RF MOSFET Transistors | |
| Height Seated (Max) | 0.022 (0.55mm) | |
| Ratings | AEC-Q200 |
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