Memory Products For Sale - PDF - Integrated Circuits (ICs) -Page7

Integrated Circuits (ICs)
Memory

						Mounting Type	Package / Case	Supplier Device Package	Active Read Current - Max	Approvals	Factory Pack QuantityFactory Pack Quantity	Interface Type	Manufacturer	Manufacturer Part Number	Maximum Clock Frequency	Maximum Operating Temperature	Memory Types	Mfr	Minimum Operating Temperature	Moisture Sensitive	Mounting Styles	Package	Part Life Cycle Code	Part Package Code	Product Status	Risk Rank	Supply Voltage-Max	Supply Voltage-Min	Timing Type	Operating Temperature	Packaging	Series	Technology	Voltage - Supply	Reach Compliance Code	Memory Size	Speed	Output Configuration	Output Current	Clock Frequency	Supply Current-Max	Access Time	Memory Format	Memory Interface	Data Bus Width	Organization	Write Cycle Time - Word, Page	Control Voltage	Memory Organization
	Mfr. GD9FU1G8F3ALGI Twicea 333-535-GD9FU1G8F3ALGI	GigaDevice	NAND Flash	23100	Min.:1 Mult.:1	-	FBGA-63	-	30 mA	-	2100	Parallel	-	-	-	+ 85 C	-	-	- 40 C	-	SMD/SMT	-	-	-	-	-	3.6 V	2.7 V	-	-	Tray	-	-	-	-	1 Gbit	-	-	-	-	30 mA	-	-	-	8 bit	128 M x 8	-	-	-
GD9FU1G8F3ALGI 333-535-GD9FU1G8F3ALGI GigaDevice : : - : 23100 1 : -
	Mfr. GD5F2GQ5RFZIGY Twicea 333-535-GD5F2GQ5RFZIGY	GigaDevice	NAND Flash		Min.:1 Mult.:1	-	TFBGA-24	-	40 mA	-	4800	SPI	-	-	120 MHz	+ 85 C	-	-	- 40 C	-	SMD/SMT	-	-	-	-	-	2 V	1.7 V	-	-	Tray	-	-	-	-	2 Gbit	400 us	-	-	-	40 mA	-	-	-	-	256 M x 8	-	-	-
GD5F2GQ5RFZIGY 333-535-GD5F2GQ5RFZIGY GigaDevice : : - : - 1 : -
	Mfr. GD55LX02GEBIRY Twicea 333-535-GD55LX02GEBIRY	GigaDevice	NOR Flash		Min.:1 Mult.:1	-	TFBGA-24	-	-	-	4800	SPI	-	-	166 MHz	+ 85 C	-	-	- 40 C	-	SMD/SMT	-	-	-	-	-	2 V	1.65 V	-	-	Tray	-	-	-	-	2 Gbit	166 MHz	-	-	-	-	-	-	-	8 bit	-	-	-	-
GD55LX02GEBIRY 333-535-GD55LX02GEBIRY GigaDevice : : - : - 1 : -
	Mfr. GD25WQ128EQIGR Twicea 333-535-GD25WQ128EQIGR	GigaDevice	NOR Flash		Min.:1 Mult.:1	-	USON-8	-	25 mA	-	3000	SPI	-	-	104 MHz	+ 85 C	-	-	- 40 C	-	SMD/SMT	-	-	-	-	-	3.6 V	1.65 V	-	-	Reel	-	-	-	-	128 Mbit	104 MHz	-	-	-	-	-	-	-	8 bit	16 M x 8	-	-	-
GD25WQ128EQIGR 333-535-GD25WQ128EQIGR GigaDevice : : - : - 1 : -
	Mfr. GD25LQ255EYIGY Twicea 333-535-GD25LQ255EYIGY	GigaDevice	NOR Flash	36	Min.:1 Mult.:1	-	WSON-8	-	-	-	4800	SPI	-	-	133 MHz	+ 85 C	-	-	- 40 C	-	SMD/SMT	-	-	-	-	-	2 V	1.65 V	-	-	Tray	-	-	-	-	256 Mbit	133 MHz	-	-	-	-	-	-	-	8 bit	32 M x 8	-	-	-
GD25LQ255EYIGY 333-535-GD25LQ255EYIGY GigaDevice : : - : 36 1 : -
	Mfr. GD25LQ80ESIGR Twicea 333-535-GD25LQ80ESIGR	GigaDevice	NOR Flash	80000	Min.:1 Mult.:1	-	SOP-8	-	-	-	2000	SPI	-	-	133 MHz	+ 85 C	-	-	- 40 C	-	SMD/SMT	-	-	-	-	-	2 V	1.65 V	-	-	Reel	-	-	-	-	8 Mbit	133 MHz	-	-	-	-	-	-	-	8 bit	1 M x 8	-	-	-
GD25LQ80ESIGR 333-535-GD25LQ80ESIGR GigaDevice : : - : 80000 1 : -
	Mfr. GD9FU2G8F2AMGI Twicea 333-535-GD9FU2G8F2AMGI	GigaDevice	NAND Flash	9000	Min.:1 Mult.:1	-	TSOPI-48	-	30 mA	-	960	Parallel	-	-	-	+ 85 C	-	-	- 40 C	-	SMD/SMT	-	-	-	-	-	3.6 V	2.7 V	-	-	Tray	-	-	-	-	2 Gbit	-	-	-	-	30 mA	-	-	-	8 bit	128 M x 8	-	-	-
GD9FU2G8F2AMGI 333-535-GD9FU2G8F2AMGI GigaDevice : : - : 9000 1 : -
	Mfr. GD5F1GQ5UEYIGY Twicea 333-535-GD5F1GQ5UEYIGY	GigaDevice	NAND Flash	70	Min.:1 Mult.:1	-	WSON-8	-	40 mA	-	4800	SPI	-	-	120 MHz	+ 85 C	-	-	- 40 C	Yes	SMD/SMT	-	-	-	-	-	3.6 V	2.7 V	Synchronous	-	Tray	-	-	-	-	1 Gbit	400 us	-	-	-	30 mA	-	-	-	8 bit	128 M x 8	-	-	-
GD5F1GQ5UEYIGY 333-535-GD5F1GQ5UEYIGY GigaDevice : : - : 70 1 : -
	Mfr. GD25Q256EBIRY Twicea 333-535-GD25Q256EBIRY	GigaDevice	NOR Flash	482	Min.:1 Mult.:1	-	TFBGA-24	-	-	-	4800	SPI	-	-	133 MHz	+ 85 C	-	-	- 40 C	-	SMD/SMT	-	-	-	-	-	3.6 V	2.7 V	-	-	Tray	-	-	-	-	256 Mbit	133 MHz	-	-	-	-	-	-	-	8 bit	32 M x 8	-	-	-
GD25Q256EBIRY 333-535-GD25Q256EBIRY GigaDevice : : - : 482 1 : -
	Mfr. GD55LT512WEFIRR Twicea 333-535-GD55LT512WEFIRR	GigaDevice	NOR Flash		Min.:1 Mult.:1	-	SOP-16	-	-	-	1000	SPI	-	-	166 MHz	+ 85 C	-	-	- 40 C	-	SMD/SMT	-	-	-	-	-	2 V	1.65 V	-	-	Reel	-	-	-	-	512 Mbit	166 MHz	-	-	-	-	-	-	-	8 bit	-	-	-	-
GD55LT512WEFIRR 333-535-GD55LT512WEFIRR GigaDevice : : - : - 1 : -
	Mfr. GD9FS4G8F3ALGI Twicea 333-535-GD9FS4G8F3ALGI	GigaDevice	NAND Flash		Min.:1 Mult.:1	-	FBGA-63	-	30 mA	-	2100	Parallel	-	-	-	+ 85 C	-	-	- 40 C	-	SMD/SMT	-	-	-	-	-	1.95 V	1.7 V	-	-	Tray	-	-	-	-	4 Gbit	-	-	-	-	30 mA	-	-	-	8 bit	128 M x 8	-	-	-
GD9FS4G8F3ALGI 333-535-GD9FS4G8F3ALGI GigaDevice : : - : - 1 : -
	Mfr. GD9FS1G8F3AMGI Twicea 333-535-GD9FS1G8F3AMGI	GigaDevice	NAND Flash	20	Min.:1 Mult.:1	-	TSOPI-48	-	30 mA	-	960	Parallel	-	-	-	+ 85 C	-	-	- 40 C	-	SMD/SMT	-	-	-	-	-	1.95 V	1.7 V	-	-	Tray	-	-	-	-	1 Gbit	-	-	-	-	30 mA	-	-	-	8 bit	128 M x 8	-	-	-
GD9FS1G8F3AMGI 333-535-GD9FS1G8F3AMGI GigaDevice : : - : 20 1 : -
	Mfr. GD9FU8G8E2AMGI Twicea 333-535-GD9FU8G8E2AMGI	GigaDevice	NAND Flash		Min.:1 Mult.:1	-	TSOPI-48	-	30 mA	-	960	Parallel	-	-	-	+ 85 C	-	-	- 40 C	-	SMD/SMT	-	-	-	-	-	3.6 V	2.7 V	-	-	Tray	-	-	-	-	8 Gbit	-	-	-	-	30 mA	-	-	-	8 bit	128 M x 8	-	-	-
GD9FU8G8E2AMGI 333-535-GD9FU8G8E2AMGI GigaDevice : : - : - 1 : -
	Mfr. GD5F1GQ5UEYIGR Twicea 333-535-GD5F1GQ5UEYIGR	GigaDevice	NAND Flash	30000	Min.:1 Mult.:1	-	WSON-8	-	40 mA	-	3000	SPI	-	-	120 MHz	+ 85 C	-	-	- 40 C	Yes	SMD/SMT	-	-	-	-	-	3.6 V	2.7 V	Synchronous	-	Cut Tape	-	-	-	-	1 Gbit	400 us	-	-	-	30 mA	-	-	-	8 bit	128 M x 8	-	-	-
GD5F1GQ5UEYIGR 333-535-GD5F1GQ5UEYIGR GigaDevice : : - : 30000 1 : -
	Mfr. GD9FU8G8E3AMGI Twicea 333-535-GD9FU8G8E3AMGI	GigaDevice	NAND Flash	300	Min.:1 Mult.:1	-	TSOPI-48	-	30 mA	-	960	Parallel	-	-	-	+ 85 C	-	-	- 40 C	-	SMD/SMT	-	-	-	-	-	3.6 V	2.7 V	-	-	Tray	-	-	-	-	8 Gbit	-	-	-	-	30 mA	-	-	-	8 bit	128 M x 8	-	-	-
GD9FU8G8E3AMGI 333-535-GD9FU8G8E3AMGI GigaDevice : : - : 300 1 : -
	Mfr. GD9FS8G8E3AMGI Twicea 333-535-GD9FS8G8E3AMGI	GigaDevice	NAND Flash		Min.:1 Mult.:1	-	TSOPI-48	-	30 mA	-	960	Parallel	-	-	-	+ 85 C	-	-	- 40 C	-	SMD/SMT	-	-	-	-	-	1.95 V	1.7 V	-	-	Tray	-	-	-	-	8 Gbit	-	-	-	-	30 mA	-	-	-	8 bit	128 M x 8	-	-	-
GD9FS8G8E3AMGI 333-535-GD9FS8G8E3AMGI GigaDevice : : - : - 1 : -
	Mfr. GD25LE16ETIGR Twicea 333-535-GD25LE16ETIGR	GigaDevice	NOR Flash		Min.:1 Mult.:1	-	SOP-8	-	10 mA	UL	-	SPI	Warrick a Brand of Gems Sensor	26NMC1A4	133 MHz	+ 85 C	-	-	- 40 C	-	SMD/SMT	-	-	-	-	-	2 V	1.65 V	-	-	-	-	-	-	-	16 Mbit	-	SPDT	10 A	-	-	-	-	-	-	2 M x 8	-	120 VAC	-
GD25LE16ETIGR 333-535-GD25LE16ETIGR GigaDevice : : - : - 1 : -
	Mfr. GD25LQ16ETIGR Twicea 333-535-GD25LQ16ETIGR	GigaDevice	16MBIT, 1.8V, SOP8 150MIL, INDUS	6000	Min.:1 Mult.:1	Surface Mount	8-SOIC (0.154, 3.90mm Width)	8-SOP	-	-	-	SPI	Johnson Controls	VG18A5KU+94NBGA	133 MHz	+ 85 C	Non-Volatile	GigaDevice Semiconductor (HK) Limited	- 40 C	-	SMD/SMT	Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;	-	-	Active	-	2 V	1.65 V	-	-40°C ~ 85°C (TA)	-	-	FLASH - NOR (SLC)	1.65V ~ 2.1V	-	16Mbit	-	-	-	133 MHz	-	6 ns	FLASH	SPI - Quad I/O, QPI	8 bit	2 M x 8	60µs, 2.4ms	-	2M x 8
GD25LQ16ETIGR 333-535-GD25LQ16ETIGR GigaDevice : : - : 6000 1 : -
	Mfr. GD25LQ32CWIGR Twicea 333-535-GD25LQ32CWIGR	GigaDevice	32Mb SPI NOR Flash 1.65V-2.0V SOP8 (208mm)		Min.:1 Mult.:1	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GD25LQ32CWIGR 333-535-GD25LQ32CWIGR GigaDevice : : - : - 1 : -
	Mfr. GD32F150K6U6 Twicea 333-535-GD32F150K6U6	GigaDevice	72MHz 32K Flash 6K SRAM up to 23 I/O		Min.:1 Mult.:1	-	-	-	-	-	-	-	GigaDevice Semiconductor (Beijing) Inc	GD32F150K6U6	-	-	-	-	-	-	-	-	Active	QFN32	-	5.73	-	-	-	-	-	-	-	-	unknown	-	-	-	-	-	-	-	-	-	-	-	-	-	-
GD32F150K6U6 333-535-GD32F150K6U6 GigaDevice : : - : - 1 : -

Integrated Circuits (ICs)

Memory definition: Memory is a component used to store programs and various data information. A memory cell is actually a type of sequential logic circuit. A m... Memory Product Listing: GD9FU1G8F3ALGI,GD5F2GQ5RFZIGY,GD55LX02GEBIRY,GD25WQ128EQIGR,GD25LQ255EYIGY.Integrated Circuits (ICs) type:Embedded - Microcontrollers(134273),Memory(116337),PMIC - Voltage Regulators - Linear(107072),PMIC - Supervisors(101983),Embedded - FPGAs (Field Programmable Gate Array)(62862) .Memory has 985 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Twicea.

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Integrated Circuits (ICs)