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Factory Lead TimeMountPackage / CaseSurface MountNumber of PinsNumber of TerminalsAccess Time-MaxBrandClock Frequency-Max (fCLK)Data Rate ArchitectureFactory Pack QuantityFactory Pack QuantityIhs ManufacturerInterface TypeManufacturerManufacturer Part NumberMaximum Clock FrequencyMaximum Clock RateMaximum Operating Supply VoltageMaximum Operating TemperatureMemory TypesMinimum Operating Supply VoltageMinimum Operating TemperatureMoisture SensitiveMoisture Sensitivity LevelsMountingMounting StylesNumber of I/O LinesNumber of WordsNumber of Words CodeOperating Temperature-MaxOperating Temperature-MinPackage Body MaterialPackage CodePackage DescriptionPackage Equivalence CodePackage ShapePackage StylePart Life Cycle CodePart Package CodeReflow Temperature-Max (s)Risk RankRoHSRohs CodeSupplier PackageSupply Voltage-MaxSupply Voltage-MinSupply Voltage-Nom (Vsup)Timing TypeTradenameTypical Operating Supply VoltageUnit WeightUsage LevelOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodeECCN CodeTypeTerminal FinishMax Operating TemperatureMin Operating TemperatureAdditional FeatureHTS CodeSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Number of FunctionsTerminal PitchReach Compliance CodePin CountJESD-30 CodeQualification StatusOperating Supply VoltageSupply Voltage-Max (Vsup)Power SuppliesTemperature GradeSupply Voltage-Min (Vsup)Max Supply VoltageMin Supply VoltageMemory SizeNumber of PortsNominal Supply CurrentOperating ModeSupply Current-MaxAccess TimeArchitectureData Bus WidthOrganizationOutput CharacteristicsSeated Height-MaxMemory WidthAddress Bus WidthProduct TypeDensityStandby Current-MaxMemory DensityScreening LevelParallel/SerialI/O TypeSync/AsyncWord SizeMemory IC TypeStandby Voltage-MinAccess ModeSelf RefreshProduct CategoryLengthWidthRadiation Hardening
Factory Lead TimeMountPackage / CaseSurface MountNumber of PinsNumber of TerminalsAccess Time-MaxBrandClock Frequency-Max (fCLK)Data Rate ArchitectureFactory Pack QuantityFactory Pack QuantityIhs ManufacturerInterface TypeManufacturerManufacturer Part NumberMaximum Clock FrequencyMaximum Clock RateMaximum Operating Supply VoltageMaximum Operating TemperatureMemory TypesMinimum Operating Supply VoltageMinimum Operating TemperatureMoisture SensitiveMoisture Sensitivity LevelsMountingMounting StylesNumber of I/O LinesNumber of WordsNumber of Words CodeOperating Temperature-MaxOperating Temperature-MinPackage Body MaterialPackage CodePackage DescriptionPackage Equivalence CodePackage ShapePackage StylePart Life Cycle CodePart Package CodeReflow Temperature-Max (s)Risk RankRoHSRohs CodeSupplier PackageSupply Voltage-MaxSupply Voltage-MinSupply Voltage-Nom (Vsup)Timing TypeTradenameTypical Operating Supply VoltageUnit WeightUsage LevelOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodeECCN CodeTypeTerminal FinishMax Operating TemperatureMin Operating TemperatureAdditional FeatureHTS CodeSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Number of FunctionsTerminal PitchReach Compliance CodePin CountJESD-30 CodeQualification StatusOperating Supply VoltageSupply Voltage-Max (Vsup)Power SuppliesTemperature GradeSupply Voltage-Min (Vsup)Max Supply VoltageMin Supply VoltageMemory SizeNumber of PortsNominal Supply CurrentOperating ModeSupply Current-MaxAccess TimeArchitectureData Bus WidthOrganizationOutput CharacteristicsSeated Height-MaxMemory WidthAddress Bus WidthProduct TypeDensityStandby Current-MaxMemory DensityScreening LevelParallel/SerialI/O TypeSync/AsyncWord SizeMemory IC TypeStandby Voltage-MinAccess ModeSelf RefreshProduct CategoryLengthWidthRadiation Hardening
GSI Technology GS8162Z18DD-200I
Mfr.
GS8162Z18DD-200I
Twicea
17331-535-GS8162Z18DD-200I
GSI Technology
ZBT SRAM, 1MX18, 6.5ns, CMOS, PBGA165, FPBGA-165
    Min.:1
    Mult.:1
    - - BGA-165 - - - - GSI Technology - SDR 36 - Parallel GSI Technology - 200 MHz 153.8@Flow-Through/200@Pipelined MHz 2.7, 3.6 V + 85 C SDR 2.3, 3 V - 40 C Yes - Surface Mount SMD/SMT 18 Bit 1 MWords - - - - - - - - - - - - - - - FBGA 3.6 V 2.3 V - Synchronous NBT SRAM 2.5, 3.3 V - Industrial grade -40 to 100 °C Tray GS8162Z18DD - - - NBT Pipeline/Flow Through - - - - - Memory & Data Storage - - - - - - - 165 - - - - - - - - - 18 Mbit 2 - - 215 mA 6.5 ns Flow-Through/Pipelined - 1 M x 18 - - - 20 Bit SRAM 18 Mbit - - Industrial - - - - - - - - SRAM - - -
    GS8162Z18DD-200I
    GS8162Z18DD-200I

    17331-535-GS8162Z18DD-200I GSI Technology
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    GSI Technology GS881E18CGT-150
    Mfr.
    GS881E18CGT-150
    Twicea
    17331-535-GS881E18CGT-150
    GSI Technology
    Cache SRAM, 512KX18, 7.5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100
      Min.:1
      Mult.:1
      - - TQFP-100 - - - - GSI Technology - - 72 - Parallel GSI Technology - 150 MHz - - + 70 C SDR - 0 C Yes - - SMD/SMT - - - - - - - - - - - - - - - Details - - 3.6 V 2.3 V - - SyncBurst - - - - Tray GS881E18CGT - - - DCD Pipeline/Flow Through - - - - - Memory & Data Storage - - - - - - - - - - - - - - - - - 9 Mbit - - - 120 mA, 130 mA 7.5 ns - - 512 k x 18 - - - - SRAM - - - - - - - - - - - - SRAM - - -
      GS881E18CGT-150
      GS881E18CGT-150

      17331-535-GS881E18CGT-150 GSI Technology
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      GSI Technology GS8342TT07BD-300I
      Mfr.
      GS8342TT07BD-300I
      Twicea
      17331-535-GS8342TT07BD-300I
      GSI Technology
      DDR SRAM, 4MX8, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165
        Min.:1
        Mult.:1
        10 Weeks - BGA-165 YES - 165 0.45 ns GSI Technology 300 MHz DDR 15 GSI TECHNOLOGY Parallel GSI Technology GS8342TT07BD-300I 300 MHz 300 MHz 1.9 V + 85 C DDR 1.7 V - 40 C Yes - Surface Mount SMD/SMT 8 Bit 4 MWords 4000000 85 °C -40 °C PLASTIC/EPOXY LBGA LBGA, BGA165,11X15,40 BGA165,11X15,40 RECTANGULAR GRID ARRAY, LOW PROFILE Active BGA NOT SPECIFIED 5.36 - No FBGA 1.9 V 1.7 V 1.8 V Synchronous SigmaDDR-II+ 1.8000 V - Industrial grade -40 to 100 °C Tray GS8342TT07BD e0 - 3A991.B.2.B SigmaDDR-II+ B2 Tin/Lead (Sn/Pb) - - PIPELINED ARCHITECTURE, LATE WRITE 8542.32.00.41 Memory & Data Storage CMOS BOTTOM BALL NOT SPECIFIED 1 1 mm compliant 165 R-PBGA-B165 Not Qualified - 1.9 V 1.5/1.8,1.8 V INDUSTRIAL 1.7 V - - 36 Mbit 1 - SYNCHRONOUS 460 mA - Pipelined - 4 M x 8 3-STATE 1.4 mm 8 21 Bit SRAM 36 Mbit - 33554432 bit Industrial PARALLEL COMMON - - DDR SRAM 1.7 V - - SRAM 15 mm 13 mm -
        GS8342TT07BD-300I
        GS8342TT07BD-300I

        17331-535-GS8342TT07BD-300I GSI Technology
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        GSI Technology GS8672T36BGE-333I
        Mfr.
        GS8672T36BGE-333I
        Twicea
        17331-535-GS8672T36BGE-333I
        GSI Technology
        DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, FBGA-165
          Min.:1
          Mult.:1
          - - BGA-165 - - - - GSI Technology - - 15 - Parallel GSI Technology - 333 MHz - - + 85 C DDR-II - - 40 C Yes - - SMD/SMT - - - - - - - - - - - - - - - Details - - 1.9 V 1.7 V - - SigmaDDR-II - - - - Tray GS8672T36BGE - - - SigmaDDR-II - - - - - Memory & Data Storage - - - - - - - - - - - - - - - - - 72 Mbit - - - 1.28 A - - - 2 M x 36 - - - - SRAM - - - - - - - - - - - - SRAM - - -
          GS8672T36BGE-333I
          GS8672T36BGE-333I

          17331-535-GS8672T36BGE-333I GSI Technology
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          GSI Technology GS8182D09BGD-250
          Mfr.
          GS8182D09BGD-250
          Twicea
          17331-535-GS8182D09BGD-250
          GSI Technology
          DDR SRAM, 2MX9, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
            Min.:1
            Mult.:1
            - - BGA-165 - - - - GSI Technology - - 18 - Parallel GSI Technology - 250 MHz - - + 70 C DDR - 0 C Yes - - SMD/SMT - - - - - - - - - - - - - - - Details - - 1.9 V 1.7 V - - SigmaQuad-II - - - - Tray GS8182D09BGD - - - SigmaQuad-II - - - - - Memory & Data Storage - - - - - - - - - - - - - - - - - 18 Mbit - - - 420 mA - - - 2 M x 9 - - - - SRAM - - - - - - - - - - - - SRAM - - -
            GS8182D09BGD-250
            GS8182D09BGD-250

            17331-535-GS8182D09BGD-250 GSI Technology
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            GSI Technology GS8182D19BD-300
            Mfr.
            GS8182D19BD-300
            Twicea
            17331-535-GS8182D19BD-300
            GSI Technology
            DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165
              Min.:1
              Mult.:1
              - - BGA-165 - - - - GSI Technology - - 18 - Parallel GSI Technology - 300 MHz - - + 70 C DDR - 0 C Yes - - SMD/SMT - - - - - - - - - - - - - - - N - - 1.9 V 1.7 V - - SigmaQuad-II+ - - - - Tray GS8182D19BD - - - SigmaQuad II+ - - - - - Memory & Data Storage - - - - - - - - - - - - - - - - - 18 Mbit - - - 490 mA - - - 1 M x 18 - - - - SRAM - - - - - - - - - - - - SRAM - - -
              GS8182D19BD-300
              GS8182D19BD-300

              17331-535-GS8182D19BD-300 GSI Technology
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              GSI Technology GS816132DGD-200
              Mfr.
              GS816132DGD-200
              Twicea
              17331-535-GS816132DGD-200
              GSI Technology
              Cache SRAM, 512KX32, 6.5ns, CMOS, PBGA165, ROHS COMPLIANT, FPBGA-165
                Min.:1
                Mult.:1
                - - BGA-165 - - - - GSI Technology - - 36 - Parallel GSI Technology - 200 MHz - - + 70 C SDR - 0 C Yes - - SMD/SMT - - - - - - - - - - - - - - - Details - - 3.6 V 2.3 V - - SyncBurst - - - - Tray GS816132DGD - - - Pipeline/Flow Through - - - - - Memory & Data Storage - - - - - - - - - - - - - - - - - 18 Mbit - - - 210 mA 6.5 ns - - 512 k x 32 - - - - SRAM - - - - - - - - - - - - SRAM - - -
                GS816132DGD-200
                GS816132DGD-200

                17331-535-GS816132DGD-200 GSI Technology
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                GSI Technology GS816118DD-250
                Mfr.
                GS816118DD-250
                Twicea
                17331-535-GS816118DD-250
                GSI Technology
                Cache SRAM, 1MX18, 5.5ns, CMOS, PBGA165, FPBGA-165
                  Min.:1
                  Mult.:1
                  - - BGA-165 - - - - GSI Technology - - 36 - Parallel GSI Technology - 250 MHz - - + 70 C SDR - 0 C Yes - - SMD/SMT - - - - - - - - - - - - - - - N - - 3.6 V 2.3 V - - SyncBurst - - - - Tray GS816118DD - - - Pipeline/Flow Through - - - - - Memory & Data Storage - - - - - - - - - - - - - - - - - 18 Mbit - - - 210 mA, 230 mA 5.5 ns - - 1 M x 18 - - - - SRAM - - - - - - - - - - - - SRAM - - -
                  GS816118DD-250
                  GS816118DD-250

                  17331-535-GS816118DD-250 GSI Technology
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                  GSI Technology GS816236DB-150
                  Mfr.
                  GS816236DB-150
                  Twicea
                  17331-535-GS816236DB-150
                  GSI Technology
                  Cache SRAM, 512KX36, 7.5ns, CMOS, PBGA119, FPBGA-119
                    Min.:1
                    Mult.:1
                    - - BGA-119 - - - - GSI Technology - SDR 21 - Parallel GSI Technology - 150 MHz 133.3@Flow-Through/150@Pipelined MHz 2.7, 3.6 V + 70 C SDR 2.3, 3 V 0 C Yes - Surface Mount SMD/SMT 36 Bit 512 kWords - - - - - - - - - - - - - N - FBGA 3.6 V 2.3 V - Synchronous SyncBurst 2.5, 3.3 V - Commercial grade 0 to 85 °C Tray GS816236DB - - - Pipeline/Flow Through - - - - - Memory & Data Storage - - - - - - - 119 - - - - - - - - - 18 Mbit 4 - - 180 mA, 190 mA 7.5 ns Flow-Through/Pipelined - 512 k x 36 - - - 19 Bit SRAM 18 Mbit - - Commercial - - - - - - - - SRAM - - -
                    GS816236DB-150
                    GS816236DB-150

                    17331-535-GS816236DB-150 GSI Technology
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                    GSI Technology GS832272GC-200
                    Mfr.
                    GS832272GC-200
                    Twicea
                    17331-535-GS832272GC-200
                    GSI Technology
                    Cache SRAM, 512KX72, 7.5ns, CMOS, PBGA209, 14 X 22 MM, 1 MM PITCH, ROHS COMPLIANT, BGA-209
                      Min.:1
                      Mult.:1
                      8 Weeks - BGA-209 YES - 209 7.5 ns GSI Technology 200 MHz - 14 GSI TECHNOLOGY Parallel GSI Technology GS832272GC-200 200 MHz - 2.7, 3.6 V + 70 C SDR 2.3, 3 V 0 C Yes 3 - SMD/SMT 72 Bit 524288 words 512000 70 °C - PLASTIC/EPOXY LBGA LBGA, BGA209,11X19,40 BGA209,11X19,40 RECTANGULAR GRID ARRAY, LOW PROFILE Active BGA NOT SPECIFIED 1.45 Details Yes - 3.6 V 2.3 V 2.5 V Synchronous SyncBurst 2.5, 3.3 V - Commercial grade 0 to 70 °C Tray GS832272GC e1 Yes 3A991.B.2.B SCD/DCD Pipeline/Flow Through TIN SILVER COPPER - - FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY 8542.32.00.41 Memory & Data Storage CMOS BOTTOM BALL 260 1 1 mm compliant 209 R-PBGA-B209 Not Qualified - 2.7 V 2.5/3.3 V COMMERCIAL 2.3 V - - 36 Mbit - - SYNCHRONOUS 235 mA, 320 mA 7.5@Flow-Through/3@P - - 512 k x 72 3-STATE 1.7 mm 72 - SRAM - 0.06 A 36 Commercial PARALLEL COMMON - - CACHE SRAM 2.38 V - - SRAM 22 mm 14 mm -
                      GS832272GC-200
                      GS832272GC-200

                      17331-535-GS832272GC-200 GSI Technology
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                      GSI Technology GS8162Z18DGB-250I
                      Mfr.
                      GS8162Z18DGB-250I
                      Twicea
                      17331-535-GS8162Z18DGB-250I
                      GSI Technology
                      ZBT SRAM, 1MX18, 5.5ns, CMOS, PBGA119, ROHS COMPLIANT, FPBGA-119
                        Min.:1
                        Mult.:1
                        10 Weeks - BGA-119 YES - 119 5.5 ns GSI Technology - - 21 GSI TECHNOLOGY Parallel GSI Technology GS8162Z18DGB-250I 250 MHz - - + 85 C SDR - - 40 C Yes - - SMD/SMT - 1048576 words 1000000 85 °C -40 °C PLASTIC/EPOXY BGA BGA, - RECTANGULAR GRID ARRAY Active BGA NOT SPECIFIED 5.26 Details Yes - 3.6 V 2.3 V 2.5 V - NBT SRAM - - - - Tray GS8162Z18DGB - - 3A991.B.2.B NBT Pipeline/Flow Through - - - FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY 8542.32.00.41 Memory & Data Storage CMOS BOTTOM BALL NOT SPECIFIED 1 1.27 mm compliant 119 R-PBGA-B119 Not Qualified - 2.7 V - INDUSTRIAL 2.3 V - - 18 Mbit - - SYNCHRONOUS 230 mA, 250 mA 5.5 ns - - 1 M x 18 - 1.99 mm 18 - SRAM - - 18874368 bit - PARALLEL - - - ZBT SRAM - - - SRAM 22 mm 14 mm -
                        GS8162Z18DGB-250I
                        GS8162Z18DGB-250I

                        17331-535-GS8162Z18DGB-250I GSI Technology
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                        GSI Technology GS4576C36GL-25I
                        Mfr.
                        GS4576C36GL-25I
                        Twicea
                        17331-535-GS4576C36GL-25I
                        GSI Technology
                        DRAM 16M x 36 (288Meg) LLDRAM IICommon I/O
                          Min.:1
                          Mult.:1
                          - - uBGA-144 YES - 144 - - - - 18 GSI TECHNOLOGY - - GS4576C36GL-25I 400 MHz - - + 95 C - - - 40 C Yes - - SMD/SMT - 16777216 words 16000000 85 °C -40 °C PLASTIC/EPOXY TFBGA TFBGA, - RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH End Of Life BGA NOT SPECIFIED 5.09 Details Yes - 1.9 V 1.7 V 1.8 V - - - 0.423288 oz - - Tray - - - 3A991.B.2.B SDRAM - DDR - - - AUTO/SELF REFRESH 8542.32.00.32 - CMOS BOTTOM BALL NOT SPECIFIED 1 0.8 mm compliant 144 R-PBGA-B144 Not Qualified - 1.9 V - INDUSTRIAL 1.7 V - - 576 Mbit 1 - SYNCHRONOUS 570 mA 20 ns - 36 bit 16 M x 36 - 1.2 mm 36 - - - - 603979776 bit - - - - - DDR DRAM - MULTI BANK PAGE BURST YES - 18.5 mm 11 mm -
                          GS4576C36GL-25I
                          GS4576C36GL-25I

                          17331-535-GS4576C36GL-25I GSI Technology
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                          GSI Technology GS4576C18GL-25I
                          Mfr.
                          GS4576C18GL-25I
                          Twicea
                          17331-535-GS4576C18GL-25I
                          GSI Technology
                          DRAM 32M x 18 (288Meg) LLDRAM IICommon I/O
                            Min.:1
                            Mult.:1
                            - - uBGA-144 YES - 144 - - - - 18 GSI TECHNOLOGY - - GS4576C18GL-25I 400 MHz - - + 95 C - - - 40 C Yes - - SMD/SMT - 33554432 words 32000000 85 °C -40 °C PLASTIC/EPOXY TFBGA TFBGA, - RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH End Of Life BGA NOT SPECIFIED 5.09 Details Yes - 1.9 V 1.7 V 1.8 V - - - 0.423288 oz - - Tray - - - 3A991.B.2.B SDRAM - DDR - - - AUTO/SELF REFRESH 8542.32.00.32 - CMOS BOTTOM BALL NOT SPECIFIED 1 0.8 mm compliant 144 R-PBGA-B144 Not Qualified - 1.9 V - INDUSTRIAL 1.7 V - - 576 Mbit 1 - SYNCHRONOUS 500 mA 20 ns - 18 bit 32 M x 18 - 1.2 mm 18 - - - - 603979776 bit - - - - - DDR DRAM - MULTI BANK PAGE BURST YES - 18.5 mm 11 mm -
                            GS4576C18GL-25I
                            GS4576C18GL-25I

                            17331-535-GS4576C18GL-25I GSI Technology
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                            GSI Technology GS816018BGT-150
                            Mfr.
                            GS816018BGT-150
                            Twicea
                            17331-535-GS816018BGT-150
                            GSI Technology
                            Cache SRAM, 1MX18, 7.5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100
                              Min.:1
                              Mult.:1
                              - - - YES - 100 7.5 ns - 150 MHz - - GSI TECHNOLOGY - GSI Technology GS816018BGT-150 - - - - - - - - 3 - - - 1048576 words 1000000 70 °C - PLASTIC/EPOXY LQFP LQFP, QFP100,.63X.87 QFP100,.63X.87 RECTANGULAR FLATPACK, LOW PROFILE Obsolete QFP NOT SPECIFIED 5.39 - Yes - - - 2.5 V - - - - - - - - e3 Yes 3A991.B.2.B - PURE MATTE TIN - - FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY 8542.32.00.41 SRAMs CMOS QUAD GULL WING 260 1 0.65 mm compliant 100 R-PQFP-G100 Not Qualified - 2.7 V 2.5/3.3 V COMMERCIAL 2.3 V - - - - - SYNCHRONOUS 0.185 mA - - - 1MX18 3-STATE 1.6 mm 18 - - - 0.04 A 18874368 bit - PARALLEL COMMON - - CACHE SRAM 2.3 V - - - 20 mm 14 mm -
                              GS816018BGT-150
                              GS816018BGT-150

                              17331-535-GS816018BGT-150 GSI Technology
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                              GSI Technology GS74116AGP-10
                              Mfr.
                              GS74116AGP-10
                              Twicea
                              17331-535-GS74116AGP-10
                              GSI Technology
                              Standard SRAM, 256KX16, 10ns, CMOS, PDSO44, 0.400 INCH, ROHS COMPLIANT, TSOP2-44
                                Min.:1
                                Mult.:1
                                6 Weeks Surface Mount TSOP-44 YES 44 44 10 ns GSI Technology - - 135 GSI TECHNOLOGY Parallel GSI Technology GS74116AGP-10 - - 3.6 V + 70 C SDR 3 V 0 C Yes 3 Surface Mount SMD/SMT 16 Bit 256 kWords 256000 70 °C - PLASTIC/EPOXY TSOP2 TSOP2, TSOP44,.46,32 TSOP44,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE Active TSOP2 NOT SPECIFIED 1.36 Compliant Yes TSOP-II 3.6 V 3 V 3.3 V Asynchronous - 3.3000 V 0.016882 oz Commercial grade 0 to 70 °C - GS74116AGP e3 Yes 3A991.B.2.B Asynchronous Matte Tin (Sn) 70 °C 0 °C - 8542.32.00.41 Memory & Data Storage CMOS DUAL GULL WING 260 1 0.8 mm compliant 44 R-PDSO-G44 Not Qualified 3.3 V 3.6 V 3.3 V COMMERCIAL 3 V 3.6 V 3 V 4 Mbit 1 105 mA ASYNCHRONOUS 105 mA 10 ns - - 256 k x 16 3-STATE 1.2 mm 16 18 Bit SRAM 4 Mbit 0.01 A 4194304 bit Commercial PARALLEL COMMON Asynchronous 16 b STANDARD SRAM 3 V - - SRAM 18.41 mm 10.16 mm No
                                GS74116AGP-10
                                GS74116AGP-10

                                17331-535-GS74116AGP-10 GSI Technology
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                                GSI Technology GS81302TT19E-400I
                                Mfr.
                                GS81302TT19E-400I
                                Twicea
                                17331-535-GS81302TT19E-400I
                                GSI Technology
                                DDR SRAM, 8MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FPBGA-165
                                  Min.:1
                                  Mult.:1
                                  12 Weeks - BGA-165 YES - 165 0.45 ns GSI Technology - DDR 10 GSI TECHNOLOGY Parallel GSI Technology GS81302TT19E-400I 400 MHz 400 MHz 1.9 V + 85 C DDR-II 1.7 V - 40 C Yes - Surface Mount SMD/SMT 18 Bit 8 MWords 8000000 85 °C -40 °C PLASTIC/EPOXY LBGA LBGA, - RECTANGULAR GRID ARRAY, LOW PROFILE Not Recommended BGA NOT SPECIFIED 5.06 - No FBGA 1.9 V 1.7 V 1.8 V Synchronous SigmaDDR-II+ 1.8000 V - Industrial grade -40 to 100 °C Tray GS81302TT19E - No 3A991.B.2.B SigmaDDR-II+ B2 - - - PIPELINED ARCHITECTURE, LATE WRITE 8542.32.00.41 Memory & Data Storage CMOS BOTTOM BALL NOT SPECIFIED 1 1 mm compliant 165 R-PBGA-B165 Not Qualified - 1.9 V - INDUSTRIAL 1.7 V - - 144 Mbit 1 - SYNCHRONOUS 905 mA - Pipelined - 8 M x 18 - 1.5 mm 18 22 Bit SRAM 144 Mbit - 150994944 bit Industrial PARALLEL - - - DDR SRAM - - - SRAM 17 mm 15 mm -
                                  GS81302TT19E-400I
                                  GS81302TT19E-400I

                                  17331-535-GS81302TT19E-400I GSI Technology
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                                  GSI Technology GS81302TT38GE-500I
                                  Mfr.
                                  GS81302TT38GE-500I
                                  Twicea
                                  17331-535-GS81302TT38GE-500I
                                  GSI Technology
                                  DDR SRAM, 4MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
                                    Min.:1
                                    Mult.:1
                                    - - BGA-165 - - - - GSI Technology - - 10 - Parallel GSI Technology - 500 MHz - 1.9 V + 85 C DDR-II 1.7 V - 40 C Yes - - SMD/SMT 36 Bit - - - - - - - - - - - - - - Details - - 1.9 V 1.7 V - Synchronous SigmaDDR-II+ 1.8000 V - Industrial grade -40 to 100 °C Tray GS81302TT38GE - - - SigmaDDR-II+ - - - - - Memory & Data Storage - - - - - - - 165 - - - - - - - - - 144 Mbit - - - 1.31 A 0.45 - - 4 M x 36 - - - - SRAM - - 144 Industrial - - - - - - - - SRAM - - -
                                    GS81302TT38GE-500I
                                    GS81302TT38GE-500I

                                    17331-535-GS81302TT38GE-500I GSI Technology
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                                    GSI Technology GS8182D08BD-375
                                    Mfr.
                                    GS8182D08BD-375
                                    Twicea
                                    17331-535-GS8182D08BD-375
                                    GSI Technology
                                    DDR SRAM, 2MX8, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165
                                      Min.:1
                                      Mult.:1
                                      - - BGA-165 - - - - GSI Technology - - 18 - Parallel GSI Technology - 375 MHz 375 MHz 1.9 V + 70 C DDR 1.7 V 0 C Yes - - SMD/SMT 8 Bit - - - - - - - - - - - - - - - - FBGA 1.9 V 1.7 V - Synchronous SigmaQuad-II 1.8000 V - Commercial grade 0 to 70 °C Tray GS8182D08BD - - - SigmaQuad-II - - - - - Memory & Data Storage - - - - - - - 165 - - - - - - - - - 18 Mbit - - - 680 mA 0.45 - - 2 M x 8 - - - 19 Bit SRAM - - 18 Commercial - - - - - - - - SRAM - - -
                                      GS8182D08BD-375
                                      GS8182D08BD-375

                                      17331-535-GS8182D08BD-375 GSI Technology
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                                      1 : -
                                      GSI Technology GS8182S08BD-167
                                      Mfr.
                                      GS8182S08BD-167
                                      Twicea
                                      17331-535-GS8182S08BD-167
                                      GSI Technology
                                      DDR SRAM, 2MX8, 0.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165
                                        Min.:1
                                        Mult.:1
                                        - - BGA-165 - - - - GSI Technology - - 18 - Parallel GSI Technology - 167 MHz - - + 70 C DDR - 0 C Yes - - SMD/SMT - - - - - - - - - - - - - - - N - - 1.9 V 1.7 V - - SigmaSIO DDR-II - - - - Tray GS8182S08BD - - - SigmaSIO DDR-II - - - - - Memory & Data Storage - - - - - - - - - - - - - - - - - 18 Mbit - - - 315 mA - - - 2 M x 8 - - - - SRAM - - - - - - - - - - - - SRAM - - -
                                        GS8182S08BD-167
                                        GS8182S08BD-167

                                        17331-535-GS8182S08BD-167 GSI Technology
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                                        1 : -
                                        GSI Technology GS8182D08BGD-200I
                                        Mfr.
                                        GS8182D08BGD-200I
                                        Twicea
                                        17331-535-GS8182D08BGD-200I
                                        GSI Technology
                                        DDR SRAM, 2MX8, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
                                          Min.:1
                                          Mult.:1
                                          - - BGA-165 - - - - - - - - - Parallel - - 200 MHz - - + 85 C - - - 40 C - - - SMD/SMT - - - - - - - - - - - - - - - - - - 1.9 V 1.7 V - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 18 Mbit - - - 365 mA - - - 2 M x 8 - - - - - - - - - - - - - - - - - - - - -
                                          GS8182D08BGD-200I
                                          GS8182D08BGD-200I

                                          17331-535-GS8182D08BGD-200I GSI Technology
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                                          Integrated Circuits (ICs)

                                          Memory definition: Memory is a component used to store programs and various data information. A memory cell is actually a type of sequential logic circuit. A m... Memory Product Listing: GS8162Z18DD-200I,GS881E18CGT-150,GS8342TT07BD-300I,GS8672T36BGE-333I,GS8182D09BGD-250.Integrated Circuits (ICs) type:Embedded - Microcontrollers(134273),Memory(116337),PMIC - Voltage Regulators - Linear(107072),PMIC - Supervisors(101983),Embedded - FPGAs (Field Programmable Gate Array)(62862) .Memory has 10000 pieces of spot stock price information, you can click the "RFQ" button to confirm the inventory and price with the Twicea.
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