- Connectors, Interconnects
- Memory Connectors - Accessories
| Factory Lead Time | Lifecycle Status | Mounting Type | Package / Case | Surface Mount | Supplier Device Package | Number of Terminals | Access Time-Max | Base Product Number | Brand | Clock Frequency-Max (fCLK) | Factory Pack QuantityFactory Pack Quantity | Ihs Manufacturer | Manufacturer Part Number | Maximum Clock Frequency | Maximum Clock Rate | Maximum Operating Temperature | Memory Types | Mfr | Minimum Operating Temperature | Moisture Sensitive | Moisture Sensitivity Levels | Mounting | Mounting Styles | Number of I/O Lines | Number of Words | Number of Words Code | Operating Temperature-Max | Operating Temperature-Min | Package | Package Body Material | Package Code | Package Description | Package Equivalence Code | Package Shape | Package Style | Part Life Cycle Code | Part Package Code | Product Status | Reflow Temperature-Max (s) | Risk Rank | RoHS | Rohs Code | Schedule B | Supplier Package | Supply Voltage-Max | Supply Voltage-Min | Supply Voltage-Nom (Vsup) | Unit Weight | Usage Level | Operating Temperature | Series | JESD-609 Code | Pbfree Code | ECCN Code | Type | Terminal Finish | Max Operating Temperature | Min Operating Temperature | Additional Feature | HTS Code | Subcategory | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Number of Functions | Terminal Pitch | Reach Compliance Code | Pin Count | JESD-30 Code | Qualification Status | Operating Supply Voltage | Supply Voltage-Max (Vsup) | Power Supplies | Temperature Grade | Supply Voltage-Min (Vsup) | Max Supply Voltage | Min Supply Voltage | Memory Size | Number of Ports | Operating Mode | Clock Frequency | Supply Current-Max | Access Time | Memory Format | Memory Interface | Data Bus Width | Organization | Output Characteristics | Seated Height-Max | Memory Width | Write Cycle Time - Word, Page | Address Bus Width | Product Type | Density | Standby Current-Max | Memory Density | Max Frequency | Screening Level | I/O Type | Memory IC Type | Refresh Cycles | Sequential Burst Length | Interleaved Burst Length | Access Mode | Self Refresh | Product Category | Number of Banks | Memory Organization | Length | Width | |||||||
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  | Mfr.IS43DR81280A-25EBL-TRTwicea413-248-IS43DR81280A-25EBL-TR | Integrated Silicon Solution, Inc. (ISSI) |
1G, 1.8V, DDR2, 128MX8, 400MHZ @CL6, 60 BALL BGA, (8MMX 13.6
| Min.:1 Mult.:1 | - | - | - | - | YES | - | 60 | 0.4 ns | - | - | 400 MHz | - | INTEGRATED SILICON SOLUTION INC | IS43DR81280A-25EBL-TR | - | - | - | - | - | - | - | - | - | - | - | 134217728 words | 128000000 | 70 °C | - | - | PLASTIC/EPOXY | TFBGA | TFBGA, BGA60,9X11,32 | BGA60,9X11,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | - | - | - | 5.49 | - | Yes | - | - | - | - | 1.8 V | - | - | - | - | - | - | - | - | - | - | - | AUTO/SELF REFRESH | - | - | - | BOTTOM | BALL | - | 1 | 0.8 mm | compliant | - | R-PBGA-B60 | Not Qualified | - | 1.9 V | 1.8 V | COMMERCIAL | 1.7 V | - | - | - | 1 | SYNCHRONOUS | - | 0.31 mA | - | - | - | - | 128MX8 | 3-STATE | 1.2 mm | 8 | - | - | - | - | - | 1073741824 bit | - | - | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | - | - | - | 13.65 mm | 8 mm | ||
| IS43DR81280A-25EBL-TR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr.IS46DR16160A-5BBLA2-TRTwicea413-248-IS46DR16160A-5BBLA2-TR | Integrated Silicon Solution, Inc. (ISSI) |
DRAM Chip DDR2 SDRAM 256M-Bit 16M x 16 1.8V 84-Pin TWBGA T/R - Tape and Reel (Alt: IS46DR16160A-5BBLA2-TR)
| Min.:1 Mult.:1 | 12 Weeks | - | - | - | YES | - | 84 | 0.6 ns | - | - | 200 MHz | - | INTEGRATED SILICON SOLUTION INC | IS46DR16160A-5BBLA2-TR | - | - | - | - | - | - | - | - | - | - | - | 16777216 words | 16000000 | 105 °C | -40 °C | - | PLASTIC/EPOXY | TFBGA | TFBGA, BGA84,9X15,32 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | - | - | - | 5.84 | - | Yes | - | - | - | - | 1.8 V | - | Automotive grade | - | - | - | - | - | - | - | - | - | AUTO/SELF REFRESH | - | - | - | BOTTOM | BALL | - | 1 | 0.8 mm | compliant | - | R-PBGA-B84 | Not Qualified | - | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | - | - | - | 1 | SYNCHRONOUS | - | 0.21 mA | - | - | - | - | 16MX16 | 3-STATE | 1.2 mm | 16 | - | - | - | - | 0.005 A | 268435456 bit | - | AEC-Q100 | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | FOUR BANK PAGE BURST | YES | - | - | - | 12.5 mm | 8 mm | ||
| IS46DR16160A-5BBLA2-TR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr.IS43DR86400B-3DBL-TRTwicea413-248-IS43DR86400B-3DBL-TR | Integrated Silicon Solution, Inc. (ISSI) |
512M, 1.8V, DDR2, 64MX8, 333MHZ @ CL5, 60 BALL BGA (10MMX10.
| Min.:1 Mult.:1 | - | - | - | - | YES | - | 60 | 0.45 ns | - | - | 333 MHz | - | INTEGRATED SILICON SOLUTION INC | IS43DR86400B-3DBL-TR | - | - | - | - | - | - | - | 1 | - | - | - | 67108864 words | 64000000 | 70 °C | - | - | PLASTIC/EPOXY | TFBGA | TFBGA, BGA60,9X11,32 | BGA60,9X11,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | - | - | NOT SPECIFIED | 5.84 | - | Yes | - | - | - | - | 1.8 V | - | - | - | - | e3 | Yes | - | - | Matte Tin (Sn) | - | - | AUTO/SELF REFRESH | - | - | - | BOTTOM | BALL | 225 | 1 | 0.8 mm | compliant | - | R-PBGA-B60 | Not Qualified | - | 1.9 V | 1.8 V | COMMERCIAL | 1.7 V | - | - | - | 1 | SYNCHRONOUS | - | 0.22 mA | - | - | - | - | 64MX8 | 3-STATE | 1.2 mm | 8 | - | - | - | - | 0.008 A | 536870912 bit | - | - | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | FOUR BANK PAGE BURST | YES | - | - | - | 10.5 mm | 10 mm | ||
| IS43DR86400B-3DBL-TR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr.IS43DR32801A-37CBLITwicea413-248-IS43DR32801A-37CBLI | Integrated Silicon Solution, Inc. (ISSI) |
256M, 1.8V, DDR2, Reduced Page, 8MX32, 267MHZ @ CL4, 126 Bal
| Min.:1 Mult.:1 | - | - | - | - | YES | - | 126 | 0.5 ns | - | - | 267 MHz | - | INTEGRATED SILICON SOLUTION INC | IS43DR32801A-37CBLI | - | - | - | - | - | - | - | 3 | - | - | - | 8388608 words | 8000000 | 85 °C | -40 °C | - | PLASTIC/EPOXY | LFBGA | LFBGA, BGA126,12X16,32 | BGA126,12X16,32 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | Obsolete | BGA | - | 10 | 5.25 | - | Yes | - | - | - | - | 1.8 V | - | - | - | - | e1 | Yes | EAR99 | - | Tin/Silver/Copper (Sn/Ag/Cu) | - | - | CAS BEFORE RAS/SELF REFRESH | 8542.32.00.24 | - | - | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 126 | R-PBGA-B126 | Not Qualified | - | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | - | - | - | 1 | SYNCHRONOUS | - | 0.45 mA | - | - | - | - | 8MX32 | 3-STATE | 1.4 mm | 32 | - | - | - | - | 0.008 A | 268435456 bit | - | - | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | FOUR BANK PAGE BURST | YES | - | - | - | 14 mm | 11 mm | ||
| IS43DR32801A-37CBLI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr.IS46DR16160A-37CBA1-TRTwicea413-248-IS46DR16160A-37CBA1-TR | Integrated Silicon Solution, Inc. (ISSI) |
DRAM Chip DDR2 SDRAM 256M-Bit 16M x 16 1.8V 84-Pin TWBGA T/R
| Min.:1 Mult.:1 | 16 Weeks | - | - | - | YES | - | 84 | 0.5 ns | - | - | 266 MHz | - | INTEGRATED SILICON SOLUTION INC | IS46DR16160A-37CBA1-TR | - | - | - | - | - | - | - | - | - | - | - | 16777216 words | 16000000 | 85 °C | -40 °C | - | PLASTIC/EPOXY | TFBGA | 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TWBGA-84 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | - | - | - | 5.92 | Non-Compliant | No | - | - | - | - | 1.8 V | - | Automotive grade | - | - | - | - | - | - | - | - | - | AUTO/SELF REFRESH | - | - | - | BOTTOM | BALL | - | 1 | 0.8 mm | unknown | - | R-PBGA-B84 | Not Qualified | - | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | - | - | - | 1 | SYNCHRONOUS | - | 0.27 mA | - | - | - | - | 16MX16 | 3-STATE | 1.2 mm | 16 | - | - | - | - | 0.005 A | 268435456 bit | - | AEC-Q100 | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | FOUR BANK PAGE BURST | YES | - | - | - | 12.5 mm | 8 mm | ||
| IS46DR16160A-37CBA1-TR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr.IS46DR16640A-3DBLA2-TRTwicea413-248-IS46DR16640A-3DBLA2-TR | Integrated Silicon Solution, Inc. (ISSI) |
AUTOMOTIVE (TC: -40 TO 105C),1G, 1.8V, DDR2, 64MX16, 333MHZ
| Min.:1 Mult.:1 | - | - | - | - | YES | - | 84 | 0.4 ns | - | - | 333 MHz | - | INTEGRATED SILICON SOLUTION INC | IS46DR16640A-3DBLA2-TR | - | - | - | - | - | - | - | - | - | - | - | 67108864 words | 64000000 | 85 °C | -40 °C | - | PLASTIC/EPOXY | TFBGA | TFBGA, BGA84,9X15,32 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | - | - | - | 5.69 | Compliant | Yes | - | - | - | - | 1.8 V | - | Automotive grade | - | - | - | - | - | - | - | 105 °C | -40 °C | AUTO/SELF REFRESH | - | - | - | BOTTOM | BALL | - | 1 | 0.8 mm | compliant | - | R-PBGA-B84 | Not Qualified | - | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | 1.9 V | 1.7 V | 128 MB | 1 | SYNCHRONOUS | - | 0.35 mA | 450 ps | - | - | 16 b | 64MX16 | 3-STATE | 1.2 mm | 16 | - | - | - | - | 0.015 A | 1073741824 bit | 333 MHz | AEC-Q100 | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | - | - | - | 13.65 mm | 8 mm | ||
| IS46DR16640A-3DBLA2-TR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr.IS43DR32800A-37CBL-TRTwicea413-248-IS43DR32800A-37CBL-TR | Integrated Silicon Solution, Inc. (ISSI) |
DRAM 256M (8Mx32) 266MHz Commercial Temp
| Min.:1 Mult.:1 | - | - | - | - | YES | - | 126 | 0.5 ns | - | - | 267 MHz | - | INTEGRATED SILICON SOLUTION INC | IS43DR32800A-37CBL-TR | - | - | - | - | - | - | - | - | - | - | - | 8388608 words | 8000000 | 70 °C | - | - | PLASTIC/EPOXY | FBGA | - | BGA126,12X16,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | Obsolete | - | - | - | 5.84 | - | Yes | - | - | - | - | 1.8 V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | BOTTOM | BALL | - | - | 0.8 mm | compliant | - | R-PBGA-B126 | Not Qualified | - | - | 1.8 V | COMMERCIAL | - | - | - | - | - | - | - | 0.45 mA | - | - | - | - | 8MX32 | 3-STATE | - | 32 | - | - | - | - | 0.008 A | 268435456 bit | - | - | COMMON | DDR DRAM | 4096 | 4,8 | 4,8 | - | - | - | - | - | - | - | ||
| IS43DR32800A-37CBL-TR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr.IS46LD32160A-25BLA2Twicea413-248-IS46LD32160A-25BLA2 | Integrated Silicon Solution, Inc. (ISSI) |
DRAM Chip LPDDR2 S4 SDRAM 512Mbit 16Mx32 134-Ball FBGA
| Min.:1 Mult.:1 | 12 Weeks | - | - | - | YES | - | 134 | - | - | - | - | - | INTEGRATED SILICON SOLUTION INC | IS46LD32160A-25BLA2 | - | - | - | - | - | - | - | - | - | - | - | 16777216 words | 16000000 | 105 °C | -40 °C | - | PLASTIC/EPOXY | TFBGA | TFBGA, | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Active | - | - | 10 | 5.66 | - | Yes | - | - | - | - | 1.2 V | - | - | - | - | e1 | - | - | - | Tin/Silver/Copper (Sn/Ag/Cu) | - | - | SELF CONTAINED REFRESH; ALSO REQUIRES 1.8 V SUPPLY | - | - | - | BOTTOM | BALL | 260 | 1 | 0.65 mm | compliant | - | R-PBGA-B134 | - | - | 1.3 V | - | INDUSTRIAL | 1.14 V | - | - | - | 1 | SYNCHRONOUS | - | - | - | - | - | - | 16MX32 | - | 1.1 mm | 32 | - | - | - | - | - | 536870912 bit | - | - | - | DDR DRAM | - | - | - | FOUR BANK PAGE BURST | YES | - | - | - | 11.5 mm | 10 mm | ||
| IS46LD32160A-25BLA2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr.IS41LV16100C-50KI-TRTwicea413-248-IS41LV16100C-50KI-TR | Integrated Silicon Solution, Inc. (ISSI) |
DRAM Chip EDO 16M-Bit 1M x 16 3.3V 42-Pin SOJ T/R
| Min.:1 Mult.:1 | 13 Weeks, 6 Days | - | - | - | YES | - | 42 | 50 ns | - | - | - | - | INTEGRATED SILICON SOLUTION INC | IS41LV16100C-50KI-TR | - | - | - | - | - | - | - | - | - | - | - | 1048576 words | 1000000 | 85 °C | -40 °C | - | PLASTIC/EPOXY | SOJ | SOJ, SOJ42,.44 | SOJ42,.44 | RECTANGULAR | SMALL OUTLINE | Obsolete | - | - | - | 5.92 | - | No | - | - | - | - | 3.3 V | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | DUAL | J BEND | - | - | 1.27 mm | compliant | - | R-PDSO-J42 | Not Qualified | - | - | 3.3 V | INDUSTRIAL | - | - | - | - | - | - | - | 0.09 mA | - | - | - | - | 1MX16 | 3-STATE | - | 16 | - | - | - | - | 0.001 A | 16777216 bit | - | - | COMMON | EDO DRAM | 1024 | - | - | - | YES | - | - | - | - | - | ||
| IS41LV16100C-50KI-TR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr.IS43TR16640B-125KBLTwicea413-248-IS43TR16640B-125KBL | Integrated Silicon Solution, Inc. (ISSI) |
1G, 1.5V, Ddr3, 64Mx16, 1600Mt/s @ 11-11-11, 96 Ball Bga (9Mm X13Mm) Rohs
| Min.:1 Mult.:1 | 6 Weeks | - | Surface Mount | 96-TFBGA | YES | 96-TWBGA (9x13) | 96 | - | IS43TR16640 | - | - | - | INTEGRATED SILICON SOLUTION INC | IS43TR16640B-125KBL | - | - | - | Volatile | ISSI, Integrated Silicon Solution Inc | - | - | - | - | - | - | 67108864 words | 64000000 | 85 °C | - | Tray | PLASTIC/EPOXY | TFBGA | TFBGA, | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | End Of Life | - | Obsolete | NOT SPECIFIED | 6.41 | - | Yes | - | - | - | - | 1.5 V | - | - | 0°C ~ 95°C (TC) | Automotive, AEC-Q100 | - | - | EAR99 | - | - | - | - | AUTO/SELF REFRESH | 8542.32.00.32 | - | 1.425V ~ 1.575V | BOTTOM | BALL | NOT SPECIFIED | 1 | 0.8 mm | compliant | - | R-PBGA-B96 | - | - | 1.575 V | - | OTHER | 1.425 V | - | - | 1Gbit | 1 | SYNCHRONOUS | 800 MHz | - | 20 ns | DRAM | Parallel | - | 64MX16 | - | 1.2 mm | 16 | 15ns | - | - | - | - | 1073741824 bit | - | - | - | DDR DRAM | - | - | - | MULTI BANK PAGE BURST | YES | - | - | 64M x 16 | 13 mm | 9 mm | ||
| IS43TR16640B-125KBL | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr.IS43TR82560B-125KBLTwicea413-248-IS43TR82560B-125KBL | Integrated Silicon Solution, Inc. (ISSI) |
2G, 1.5V, DDR3, 256MX8, 1600MT/S @ 11-11-11, 78 BALL BGA (8MM X10.5MM) ROHS
| Min.:1 Mult.:1 | 10 Weeks | - | Surface Mount | 78-TFBGA | YES | 78-TWBGA (8x10.5) | 78 | - | IS43TR82560 | - | - | - | INTEGRATED SILICON SOLUTION INC | IS43TR82560B-125KBL | - | - | - | Volatile | ISSI, Integrated Silicon Solution Inc | - | - | - | - | - | - | 268435456 words | 256000000 | 85 °C | - | Tray | PLASTIC/EPOXY | TFBGA | TFBGA, | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | End Of Life | - | Obsolete | - | 5.6 | - | Yes | - | - | - | - | 1.5 V | - | - | 0°C ~ 95°C (TC) | Automotive, AEC-Q100 | - | - | - | - | - | - | - | AUTO/SELF REFRESH | - | - | 1.425V ~ 1.575V | BOTTOM | BALL | - | 1 | 0.8 mm | compliant | - | R-PBGA-B78 | - | - | 1.575 V | - | OTHER | 1.425 V | - | - | 2Gbit | 1 | ASYNCHRONOUS | 800 MHz | - | 20 ns | DRAM | Parallel | - | 256MX8 | - | 1.2 mm | 8 | 15ns | - | - | - | - | 2147483648 bit | - | - | - | DDR DRAM | - | - | - | MULTI BANK PAGE BURST | YES | - | - | 256M x 8 | 10.5 mm | 8 mm | ||
| IS43TR82560B-125KBL | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr.IS43TR82560C-125KBLTwicea413-248-IS43TR82560C-125KBL | Integrated Silicon Solution, Inc. (ISSI) |
2G, 1.5V, Ddr3, 256Mx8, 1600Mt/s @ 11-11-11, 78 Ball Bga (8Mm X10.5Mm) Rohs
| 250
| Min.:1 Mult.:1 | 10 Weeks | - | Surface Mount | 78-TFBGA | YES | 78-TWBGA (8x10.5) | 78 | - | - | ISSI | - | 242 | INTEGRATED SILICON SOLUTION INC | IS43TR82560C-125KBL | 800 MHz | 800 MHz | + 95 C | Volatile | ISSI, Integrated Silicon Solution Inc | 0 C | Yes | 3 | Surface Mount | SMD/SMT | 8 Bit | 268435456 words | 256000000 | 85 °C | - | Bulk | PLASTIC/EPOXY | TFBGA | TFBGA, | - | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Active | - | Active | 10 | 2.18 | Details | Yes | - | TWBGA | 1.575 V | 1.425 V | 1.5 V | 0.062054 oz | Commercial grade | 0 to 95 °C | - | e1 | - | EAR99 | DDR3 SDRAM | Tin/Silver/Copper (Sn/Ag/Cu) | - | - | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | - | Memory & Data Storage | 1.425V ~ 1.575V | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 78 | R-PBGA-B78 | - | 1.5000 V | 1.575 V | - | OTHER | 1.425 V | - | - | 2Gbit | 1 | SYNCHRONOUS | 800 MHz | 107 mA | 20 ns | DRAM | Parallel | 8 Bit | 256MX8 | - | 1.2 mm | 8 | 15ns | 15 Bit | DRAM | 2 Gbit | - | 2147483648 bit | - | Commercial | - | DDR DRAM | - | - | - | MULTI BANK PAGE BURST | YES | DRAM | 8 | 256M x 8 | 10.5 mm | 8 mm | |
| IS43TR82560C-125KBL | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr.IS43R16320E-6TL-TRTwicea413-248-IS43R16320E-6TL-TR | Integrated Silicon Solution, Inc. (ISSI) |
512M, 2.5V, DDR 32Mx16, 166MHz, 66 pin TSOP II (400 mil) RoHS, T&R
| Min.:1 Mult.:1 | 8 Weeks | - | Surface Mount | 66-TSSOP (0.400, 10.16mm Width) | YES | 66-TSOP II | 66 | 0.7 ns | - | - | - | - | INTEGRATED SILICON SOLUTION INC | IS43R16320E-6TL-TR | - | - | - | Volatile | ISSI, Integrated Silicon Solution Inc | - | - | - | - | - | - | 33554432 words | 32000000 | 70 °C | - | Tape & Reel (TR) | PLASTIC/EPOXY | TSOP2 | TSOP2, | - | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Active | - | Active | NOT SPECIFIED | 5.61 | Compliant | Yes | - | - | - | - | 2.5 V | - | - | 0°C ~ 70°C (TA) | - | - | - | - | - | - | 70 °C | 0 °C | AUTO/SELF REFRESH | - | - | 2.3V ~ 2.7V | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.65 mm | compliant | - | R-PDSO-G66 | - | - | 2.7 V | - | COMMERCIAL | 2.3 V | - | - | 512Mbit | 1 | SYNCHRONOUS | 166 MHz | - | 700 ps | DRAM | SSTL_2 | - | 32MX16 | - | 1.2 mm | 16 | 15ns | 13 b | - | 512 Mb | - | 536870912 bit | 166 MHz | - | - | DDR DRAM | - | - | - | FOUR BANK PAGE BURST | YES | - | - | 32M x 16 | 22.22 mm | 10.16 mm | ||
| IS43R16320E-6TL-TR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr.IS43R16320E-5TLTwicea413-248-IS43R16320E-5TL | Integrated Silicon Solution, Inc. (ISSI) |
DRAM 512M, 2.5V, DDR 32Mx16, 200MHz, 66 pin TSOP II (400 mil) RoHS
| 51
| Min.:1 Mult.:1 | 8 Weeks | Production (Last Updated: 2 years ago) | Surface Mount | 66-TSSOP (0.400, 10.16mm Width) | YES | 66-TSOP II | 66 | 0.7 ns | - | ISSI | - | 108 | INTEGRATED SILICON SOLUTION INC | IS43R16320E-5TL | 200 MHz | - | + 70 C | Volatile | ISSI, Integrated Silicon Solution Inc | 0 C | Yes | - | - | SMD/SMT | - | 33554432 words | 32000000 | 70 °C | - | Bulk | PLASTIC/EPOXY | TSOP2 | TSOP2, | - | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Active | - | Active | NOT SPECIFIED | 2.16 | Compliant | Yes | 8542320015 | - | 2.7 V | 2.3 V | 2.5 V | - | - | 0°C ~ 70°C (TA) | - | - | - | - | SDRAM - DDR | - | 70 °C | 0 °C | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | - | Memory & Data Storage | 2.3V ~ 2.7V | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.65 mm | compliant | - | R-PDSO-G66 | - | - | 2.7 V | - | COMMERCIAL | 2.3 V | - | - | 512Mbit | 1 | SYNCHRONOUS | 200 MHz | 140 mA | 700 ps | DRAM | SSTL_2 | 16 bit | 32MX16 | - | 1.2 mm | 16 | 15ns | 13 b | DRAM | 512 Mb | - | 536870912 bit | 200 MHz | - | - | DDR DRAM | - | - | - | FOUR BANK PAGE BURST | YES | DRAM | - | 32M x 16 | 22.22 mm | 10.16 mm | |
| IS43R16320E-5TL | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr.IS43TR82560A-15HBLITwicea413-248-IS43TR82560A-15HBLI | Integrated Silicon Solution, Inc. (ISSI) |
DRAM Chip DDR3 SDRAM 2G-Bit 256Mx8 1.5V 78-Pin F-BGA
| Min.:1 Mult.:1 | - | - | - | - | YES | - | 78 | 13.125 ns | - | - | 667 MHz | - | INTEGRATED SILICON SOLUTION INC | IS43TR82560A-15HBLI | - | - | - | - | - | - | - | - | - | - | - | 268435456 words | 256000000 | 95 °C | - | - | PLASTIC/EPOXY | TFBGA | TFBGA, BGA78,9X13,32 | BGA78,9X13,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | BGA | - | - | 5.6 | - | Yes | - | - | - | - | 1.5 V | - | - | - | - | - | - | EAR99 | - | - | - | - | AUTO SELF REFRESH MODE, ALSO OPERATES AT 1.35 V NOMINAL SUPPLY | 8542.32.00.36 | - | - | BOTTOM | BALL | - | 1 | 0.8 mm | compliant | 78 | R-PBGA-B78 | Not Qualified | - | 1.575 V | 1.5 V | OTHER | 1.425 V | - | - | - | 1 | SYNCHRONOUS | - | 0.245 mA | - | - | - | - | 256MX8 | 3-STATE | 1.2 mm | 8 | - | - | - | - | 0.014 A | 2147483648 bit | - | - | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | MULTI BANK PAGE BURST | YES | - | - | - | 10.5 mm | 9 mm | ||
| IS43TR82560A-15HBLI | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr.IS45S16100E-7TLA2Twicea413-248-IS45S16100E-7TLA2 | Integrated Silicon Solution, Inc. (ISSI) |
DRAM 16Mb, 143Mhz Sync DRAM
| Min.:1 Mult.:1 | - | - | - | - | YES | - | 50 | 5.5 ns | - | - | 143 MHz | - | INTEGRATED SILICON SOLUTION INC | IS45S16100E-7TLA2 | - | - | - | - | - | - | - | 3 | - | - | - | 1048576 words | 1000000 | 105 °C | -40 °C | - | PLASTIC/EPOXY | TSOP2 | TSOP2, TSOP50,.46,32 | TSOP50,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Obsolete | TSOP2 | - | 10 | 5.69 | - | Yes | - | - | - | - | 3.3 V | - | - | - | - | e3 | Yes | EAR99 | - | Matte Tin (Sn) - annealed | - | - | AUTO/SELF REFRESH | 8542.32.00.02 | - | - | DUAL | GULL WING | 260 | 1 | 0.8 mm | compliant | 50 | R-PDSO-G50 | Not Qualified | - | 3.6 V | 3.3 V | INDUSTRIAL | 3 V | - | - | - | 1 | SYNCHRONOUS | - | 0.17 mA | - | - | - | - | 1MX16 | 3-STATE | 1.2 mm | 16 | - | - | - | - | 0.002 A | 16777216 bit | - | - | COMMON | SYNCHRONOUS DRAM | 2048 | 1,2,4,8,FP | 1,2,4,8 | DUAL BANK PAGE BURST | YES | - | - | - | 20.95 mm | 10.16 mm | ||
| IS45S16100E-7TLA2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr.IS43R86400F-6TLTwicea413-248-IS43R86400F-6TL | Integrated Silicon Solution, Inc. (ISSI) |
DRAM Chip DDR SDRAM 512M-Bit 64Mx8 166MHz 5ns Speed 2.5V/2.6V 0 to 70°C 66-Pin TSOP-II
| 23
| Min.:1 Mult.:1 | 8 Weeks | - | Surface Mount | 66-TSSOP (0.400, 10.16mm Width) | YES | 66-TSOP II | 66 | 0.7 ns | - | ISSI | - | 108 | INTEGRATED SILICON SOLUTION INC | IS43R86400F-6TL | - | - | - | Volatile | ISSI, Integrated Silicon Solution Inc | - | Yes | - | - | SMD/SMT | - | 67108864 words | 64000000 | 70 °C | - | Bulk | PLASTIC/EPOXY | TSOP2 | TSOP2, | - | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | Active | - | Active | NOT SPECIFIED | 5.61 | Details | Yes | - | - | - | - | 2.5 V | - | - | 0°C ~ 70°C (TA) | - | - | - | EAR99 | SDRAM - DDR | - | - | - | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | - | Memory & Data Storage | 2.3V ~ 2.7V | DUAL | GULL WING | NOT SPECIFIED | 1 | 0.65 mm | compliant | - | R-PDSO-G66 | - | - | 2.7 V | - | COMMERCIAL | 2.3 V | - | - | 512Mbit | 1 | SYNCHRONOUS | 167 MHz | - | 700 ps | DRAM | SSTL_2 | - | 64MX8 | - | 1.2 mm | 8 | 15ns | - | DRAM | - | - | 536870912 bit | - | - | - | DDR DRAM | - | - | - | FOUR BANK PAGE BURST | YES | DRAM | - | 64M x 8 | 22.22 mm | 10.16 mm | |
| IS43R86400F-6TL | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr.IS46DR16320B-37CBLA2-TRTwicea413-248-IS46DR16320B-37CBLA2-TR | Integrated Silicon Solution, Inc. (ISSI) |
DRAM Automotive (Tc: -40 to 105C), 512M, 1.8V, DDR2, 32Mx16, 267Mhz @ CL4, 84 ball BGA (10.5mmx13mm) RoHS, T&R
| Min.:1 Mult.:1 | - | - | - | - | YES | - | 84 | 0.5 ns | - | - | 266 MHz | - | INTEGRATED SILICON SOLUTION INC | IS46DR16320B-37CBLA2-TR | - | - | - | - | - | - | - | 1 | - | - | - | 33554432 words | 32000000 | 105 °C | -40 °C | - | PLASTIC/EPOXY | TFBGA | TFBGA, BGA84,9X15,32 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | - | - | NOT SPECIFIED | 5.82 | - | Yes | - | - | - | - | 1.8 V | - | Automotive grade | - | - | e3 | Yes | - | - | Matte Tin (Sn) | - | - | AUTO/SELF REFRESH | - | - | - | BOTTOM | BALL | 225 | 1 | 0.8 mm | compliant | - | R-PBGA-B84 | Not Qualified | - | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | - | - | - | 1 | SYNCHRONOUS | - | 0.335 mA | - | - | - | - | 32MX16 | 3-STATE | 1.2 mm | 16 | - | - | - | - | 0.008 A | 536870912 bit | - | AEC-Q100 | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | FOUR BANK PAGE BURST | YES | - | - | - | 13 mm | 10.5 mm | ||
| IS46DR16320B-37CBLA2-TR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr.IS43DR16320B-3DBI-TRTwicea413-248-IS43DR16320B-3DBI-TR | Integrated Silicon Solution, Inc. (ISSI) |
512M, 1.8V, DDR2, 32Mx16, 333Mhz @ CL5, 84 ball BGA (10.5mmx13mm) IT, T&R
| Min.:1 Mult.:1 | - | - | - | - | YES | - | 84 | 0.45 ns | - | - | 333 MHz | - | INTEGRATED SILICON SOLUTION INC | IS43DR16320B-3DBI-TR | - | - | - | - | - | - | - | 1 | - | - | - | 33554432 words | 32000000 | 85 °C | -40 °C | - | PLASTIC/EPOXY | TFBGA | 10.50 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, MO-207, TWBGA-84 | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Obsolete | - | - | NOT SPECIFIED | 5.92 | - | No | - | - | - | - | 1.8 V | - | - | - | - | - | No | - | - | - | - | - | AUTO/SELF REFRESH | - | - | - | BOTTOM | BALL | 225 | 1 | 0.8 mm | unknown | - | R-PBGA-B84 | Not Qualified | - | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | - | - | - | 1 | SYNCHRONOUS | - | 0.34 mA | - | - | - | - | 32MX16 | 3-STATE | 1.2 mm | 16 | - | - | - | - | 0.008 A | 536870912 bit | - | - | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | FOUR BANK PAGE BURST | YES | - | - | - | 13 mm | 10.5 mm | ||
| IS43DR16320B-3DBI-TR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| | Mfr.IS45VM16320D-75BLA1Twicea413-248-IS45VM16320D-75BLA1 | Integrated Silicon Solution, Inc. (ISSI) |
DRAM Chip SDRAM 512Mbit 32Mx16 1.8V Automotive 54-Pin TFBGA
| 4000
| Min.:1 Mult.:1 | - | - | - | - | YES | - | 54 | 6 ns | - | - | 133 MHz | - | INTEGRATED SILICON SOLUTION INC | IS45VM16320D-75BLA1 | - | - | - | - | - | - | - | 3 | - | - | - | 33554432 words | 32000000 | 85 °C | -40 °C | - | PLASTIC/EPOXY | TFBGA | TFBGA, BGA54,9X9,32 | BGA54,9X9,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | Not Recommended | DSBGA | - | 40 | 5.39 | - | Yes | - | - | - | - | 1.8 V | - | Automotive grade | - | - | e1 | Yes | EAR99 | - | Tin/Silver/Copper (Sn/Ag/Cu) | - | - | AUTO/SELF REFRESH | 8542.32.00.28 | - | - | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 54 | R-PBGA-B54 | Not Qualified | - | 1.95 V | 1.8 V | INDUSTRIAL | 1.7 V | - | - | - | 1 | SYNCHRONOUS | - | 0.1 mA | - | - | - | - | 32MX16 | 3-STATE | 1.2 mm | 16 | - | - | - | - | 0.00001 A | 536870912 bit | - | AEC-Q100 | COMMON | SYNCHRONOUS DRAM | 8192 | 1,2,4,8,FP | 1,2,4,8 | FOUR BANK PAGE BURST | YES | - | - | - | 13 mm | 8 mm | |
| IS45VM16320D-75BLA1 |
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